Monday, October 27, 2014

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Permanent electronic memory (holding information without power) using the phase change of a particular material exists in two forms, and crystalline glass. The transition from one to the other is provided by a rise in temperature, the operation of writing representing a 0 or a 1. The material used is a chalcogenide glass (English chalcogenide glass, often translated incorrectly or by chalcogenide chalcogenide glass).
This method is also used for rewritable discs, CD or DVD (the "RW" and not the "R"), in which information is encoded by phase changes of the material. In this case, the writing is performed by heating with the laser. Is the optical reading, the laser beam being reflected by the best crystal form by the glassy form.
In a pRAM, writing is performed by a temperature rise caused by electrical impulses. Reading is performed by a small electrical current. Resistivity (electrical resistance per unit length) is much stronger for the glass to form the crystalline form, the outgoing ncm current to distinguish the two states.
Intel, IBM and Samsung have presented models of PRAM. Its field of application is the Flash memory with the advantage of a write thirty times higher speed and a lifetime ten times greater (figures announced ncm by Samsung). In February 2008, Intel and STMicroelectronics have presented a pram in four states.
The possibility of using this phenomenon to an electronic memory was proposed in 1970 by RG Neale, DL Nelson and GE Moore (Gordon Edward Moore, ncm Intel co-founder) in the journal Electronics (Electronics 43 (20): 56 - &;. Amorphous semiconductors 1. Non-volatile and reprogrammable memory is read-Mostly ncm here)).
See also: Permanent Memory | Computer Memory | permanent grassland | pregnancy memory | memory of man | vivid memory management | memory sharp increase xp | vivid memory of FUNCTIONING | sensation of constant hunger | Fountain permanent heron
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