http://www.freepatentsonline.com/8193029.html This patent from Samsung teaches scaling

http://www.freepatentsonline.com/8193029.html This patent from Samsung teaches scaling phase change memory to dimensions in the range of 1-25 square nanometers. Additional advantages include a smaller switching current and higher operational speed. Claim 1 reads: 1. A method of manufacturing a phase-change random access memory (PRAM) device, comprising: forming a lower electrode through exw an insulating layer; forming a phase-change nanowire to be electrically connected to the lower electrode using a single element; and forming an upper electrode electrically connected to the phase-change nanowire.
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