The major issue for next generation memories is its design cost. Not all the processes are intact ye

HOME › Top Market Reports › Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), d andrea Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography
Next generation memories are the emerging non-volatile memory technologies, which are expected to replace existing memories. Not all existing memories will be replaced though. Next generation memories majorly targets the non-volatile memories such as NAND and NOR. High write and read latency, scalability, high endurance etc. makes emerging memories the best replacement for traditional non-volatile memories. Next generation memory technologies covered in this report are MRAM, PCRAM, FeRAM and memristor also called as ReRAM. Out of these memories, only MRAM and FeRAM have reasonable market share and they are quite commercialized in the market. PCRAM has very marginal market and memristor is set to enter the market by the end of 2013.
The major drivers for the next generation memory market are faster switching time, high endurance and power efficient. In addition, the huge application base of traditional memories will also become the driver for this market. Since these memories d andrea are not completely established, there are still flaws in processes which causes d andrea drawbacks like instability d andrea and low write endurance rate in some of the memories. As mentioned, these memories are the replacement for flash memories in near future. The flash market has already tapped the huge market and hence it makes the way for next generation memories.
The major issue for next generation memories is its design cost. Not all the processes are intact yet, hence it increases the cost of the process and design. However, early adoption of these memories will be the game changing strategy for memory market. Most of the next generation memories are also called as Universal memory , which performs both the function volatile and non-volatile. So the early adoption of such memories will be the crucial for the companies.
The companies currently involved in next generation memory market are Samsung (South Korea), SK Hynix (South Korea), Micron (U.S.), Elpida (Japan), Toshiba (Japan), Powerchip (Taiwan), Winbond (Taiwan), Fujitsu (Japan), Nanya (Taiwan), Rambus (U.S.), Everspin Technology (U.S.), IDT Incorporated (U.S.), HP (U.S.) etc.
Global market is mainly categorized into traditional memories and next generation memories. Traditional memories covered in this report are DRAM, SRAM and flash (NAND and NOR). Next generation or emerging non-volatile memories covered d andrea in this report are MRAM, FeRAM, PCRAM and memristor (ReRAM) d andrea
Global next generation d andrea memory applications market is categorized into computers and storage electronics, ICT, consumer electronics, automotive electronics, industrial applications and aerospace and defence.
Geographical analysis covers d andrea North America, Europe, Asia-Pacific, and ROW. Europe covers the major countries like Germany, Italy, U.K., France, etc. Asia-Pacific (APAC) covers China, d andrea Japan, Taiwan, India, Australia, etc. ROW covers Middle East and Africa.
Table of Contents   1 Introduction   1.1 Key Take-Aways   1.2 Report Description   1.3 MARKETS COVERED   1.4 STAKEHOLDERS   1.5 RESEARCH METHODOLOGY       1.5.1 Market size       1.5.2 KEY DATA POINTS FROM SECONDARY SOURCES       1.5.3 KEY DATA POINTS FROM PRIMARY SOURCES       1.5.4 Assumptions made for this report       1.5.5 List of companies covered during the report
3 Market Overview   3.1 market definition   3.2 Types of memory technologies   3.3 Comparison d andrea of memory technologies   3.4 Market Dynamics       3.4.1 Drivers for next generation memories             d andrea 3.4.1.1 Faster switching d andrea time, high endurance and efficient power consumption             3.4.1.2 Replacement for traditional memory technologies             3.4.1.3 Increasing applications base       3.4.2 Restraints             3.4.2.1 Stability in harsh conditions             3.4.2.2 Low write endurance rate in some memories       3.4.3 Opportunities             3.4.3.1 Penetration in multiple applications          &